SSD40N10-30D 26a, 100v, r ds(on) 36m n-ch enhancement mode power mosfet elektronische bauelemente 04-may-2011 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252(d - pack) rohs compliant product a suffix of -c specifies halogen free features low r ds(on) trench technology. low thermal impedance. fast switching speed. application poe power sourcing equipment. poe powered devices. telecom dc/dc converters. white led boost converters. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current @t c =25 1 i d 26 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s 50 a total power dissipation @t c =25 1 p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resistance junction-case r jc 3.0 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. ref. millimeter ref. millimeter min. max. min. max. a 6. 4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0. 8 1.20 1 gate 3 source 2 drain
SSD40N10-30D 26a, 100v, r ds(on) 36m n-ch enhancement mode power mosfet elektronische bauelemente 04-may-2011 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1.0 - 3.5 v v ds =v gs, i d = 250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =80v, v gs =0 - - 25 v ds =80v, v gs =0, t j =55c on-state drain current 1 i d(on) 34 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 36 m v gs =10v, i d =10 a - - 42 v gs =4.5v, i d =9.2 a forward transconductance 1 g fs - 10 - s v ds =15v, i d =10 a diode forward voltage v sd - 0.89 - v i s =25a, v gs =0 dynamic 2 total gate charge q g - 14.8 - nc v ds =50v v gs =4.5v i d =10 a gate-source charge q gs - 4.3 - gate-drain charge q gd - 8.6 - turn-on delay time t d(on) - 4.8 - ns v dd = 50v r l =5 i d =10 a v gen =10v rgen=6 rise time t r - 14.2 - turn-off delay time t d(off) - 39.2 - fall time t f - 25.6 - input capacitance c iss 1216 pf v ds =15v v gs =0 f=1mhz output capacitance c oss 154 reverse transfer capacitance c rss - 131 - notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSD40N10-30D 26a, 100v, r ds(on) 36m n-ch enhancement mode power mosfet elektronische bauelemente 04-may-2011 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SSD40N10-30D 26a, 100v, r ds(on) 36m n-ch enhancement mode power mosfet elektronische bauelemente 04-may-2011 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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